S29GL01GP11FFIR20

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Non-volatile memory technology for long-term data storage
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 1 Gigabit (128 Megabytes)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The S29GL01GP11FFIR20 has a total of 48 pins. The pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write Enable
5. CE#: Chip Enable
6. OE#: Output Enable
7. RP#/BYTE#: Reset/Byte#
8. RY/BY#: Ready/Busy#
9. WP#/ACC: Write Protect/Acceleration
10. RE#/ACC: Read Enable/Acceleration
11. A19-A21: Additional address inputs
12. A22-A23: Additional address inputs
13. A24-A25: Additional address inputs
14. A26-A27: Additional address inputs
15. A28-A29: Additional address inputs
16. A30-A31: Additional address inputs
17. A32-A33: Additional address inputs
18. A34-A35: Additional address inputs
19. A36-A37: Additional address inputs
20. A38-A39: Additional address inputs
21. A40-A41: Additional address inputs
22. A42-A43: Additional address inputs
23. A44-A45: Additional address inputs
24. A46-A47: Additional address inputs
25. VSS: Ground

Functional Features

• High-speed read and write operations
• Sector erase and chip erase functions
• Automatic program and erase algorithms
• Hardware data protection features
• Low power consumption
• Advanced security features (optional)

Advantages and Disadvantages

Advantages: - High storage capacity - Fast read/write speeds - Long data retention period - Reliable and durable - Easy to integrate into electronic devices

Disadvantages: - Limited erase/program cycles - Relatively high cost compared to other memory technologies

Working Principles

The S29GL01GP11FFIR20 utilizes a floating gate transistor technology to store data. It consists of a grid of memory cells, each capable of storing a single bit of information. The data is stored by trapping electric charge in the floating gate, which alters the threshold voltage of the transistor. This allows the memory cell to retain its state even when power is removed.

Detailed Application Field Plans

The S29GL01GP11FFIR20 is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras
2. Automotive: Infotainment systems, navigation systems
3. Industrial Control Systems: Programmable logic controllers, data loggers
4. Medical Devices: Patient monitoring systems, diagnostic equipment
5. Networking Equipment: Routers, switches, network storage devices

Detailed and Complete Alternative Models

1. S29GL512P11FFIR20: 512 Megabit (64 Megabytes) capacity
2. S29GL02GP11FFIR20: 2 Gigabit (256 Megabytes) capacity
3. S29GL04GP11FFIR20: 4 Gigabit (512 Megabytes) capacity
4. S29GL08GP11FFIR20: 8 Gigabit (1 Gigabyte) capacity
5. S29GL16GP11FFIR20: 16 Gigabit (2 Gigabytes) capacity

These alternative models offer different memory capacities to suit varying application requirements.

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