S29GL01GP11FFCR10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
• Package: Surface Mount Technology (SMT) package
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Capacity: 1 Gigabit (128 Megabytes)
• Organization: 512 bytes per page, 64 pages per block, 1024 blocks
• Voltage Range: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel NOR Flash Interface
• Access Time: 70 ns (typical)

Detailed Pin Configuration

The S29GL01GP11FFCR10 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. VSS
48. VCC

Functional Features

• High-speed read and write operations for quick data access
• Reliable and durable storage solution with non-volatile memory technology
• Large storage capacity allows for storing a significant amount of data
• Low power consumption for energy-efficient operation
• Easy integration into electronic devices due to the parallel NOR flash interface

Advantages

• Fast access times enable efficient data retrieval
• Non-volatile memory ensures data retention even during power loss
• High storage capacity accommodates large amounts of data
• Low power consumption prolongs battery life in portable devices
• Compatibility with parallel NOR flash interface simplifies integration

Disadvantages

• Higher cost compared to other types of memory
• Limited endurance, with a finite number of erase/write cycles
• Larger physical size compared to some alternative memory technologies

Working Principles

The S29GL01GP11FFCR10 utilizes NOR flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is detected, allowing the retrieval of information. The parallel NOR flash interface facilitates communication between the memory and the host device.

Detailed Application Field Plans

The S29GL01GP11FFCR10 is widely used in various electronic devices that require reliable and high-capacity data storage. Some application fields include: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation systems) - Industrial equipment (e.g., control systems, data loggers) - Networking devices (e.g., routers, switches)

Detailed and Complete Alternative Models

1. S29GL512P11FFCR20 - 512 Megabit (64 Megabytes) capacity
2. S29GL02GP11FFCR10 - 2 Gigabit (256 Megabytes) capacity
3. S29GL04GP11FFCR10 - 4 Gigabit (512 Megabytes) capacity
4. S29GL08GP11FFCR10 - 8 Gigabit (1 Gigabyte) capacity

These alternative models offer different storage capacities to cater to various application requirements.

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