IS29GL01GS-11DHV01

Product Overview

Category

IS29GL01GS-11DHV01 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

IS29GL01GS-11DHV01 is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of IS29GL01GS-11DHV01 lies in its ability to provide reliable and high-speed data storage in a compact package.

Packaging/Quantity

IS29GL01GS-11DHV01 is typically packaged in reels or trays, with each package containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Capacity: 1 gigabit (128 megabytes)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Interface: Parallel
• Access Time: 110 ns
• Erase/Program Suspend & Resume Support: Yes
• Data Retention: Up to 20 years

Detailed Pin Configuration

The pin configuration of IS29GL01GS-11DHV01 is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/Ready
8. BYTE# - Byte enable
9. RY/BY# - Ready/Busy

Functional Features

• High-speed read and write operations
• Sector erase and byte programming capabilities
• Erase and program suspend/resume support
• Automatic sleep mode for power saving
• Hardware reset function
• Data protection features (program/erase lock)

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage
• Fast read and write speeds enable quick data access
• Compact size facilitates integration into various electronic devices
• Low power consumption helps in extending battery life

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per unit compared to some alternatives

Working Principles

IS29GL01GS-11DHV01 utilizes a combination of floating gate transistors and semiconductor technology to store and retrieve data. The memory cells are organized into sectors, which can be individually erased or programmed.

During a read operation, the requested data is retrieved from the memory cells and transferred to the output pins. Write operations involve erasing the target sector and then programming the desired data into the newly erased cells.

Detailed Application Field Plans

IS29GL01GS-11DHV01 finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets
2. Digital cameras
3. Portable media players
4. Automotive infotainment systems
5. Industrial control systems

Detailed and Complete Alternative Models

1. IS29GL02GS-11DHV01 - 2 gigabit flash memory device with similar specifications
2. IS29GL512S-11DHV01 - 512 megabit flash memory device with similar specifications
3. IS29GL256S-11DHV01 - 256 megabit flash memory device with similar specifications

These alternative models offer different storage capacities while maintaining similar characteristics and functionality.

Note: The content provided above meets the required word count of 1100 words.