BC858AW-G

Product Overview

Belongs to: Electronic Components
Category: Transistor
Use: Amplification of electronic signals
Characteristics: Small signal NPN transistor, high current gain, low noise
Package: SOT-23
Essence: High-performance amplifier
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Type: NPN
• Collector-Emitter Voltage (VCEO): 30V
• Collector-Base Voltage (VCBO): 30V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• Power Dissipation (Ptot): 250mW
• Transition Frequency (fT): 150MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low noise
• Small package size
• High transition frequency

Advantages

• Suitable for low noise amplification
• Compact SOT-23 package
• High transition frequency for improved performance

Disadvantages

• Limited collector current compared to other transistors
• Relatively low collector-emitter voltage rating

Working Principles

The BC858AW-G is a small signal NPN transistor designed for amplifying electronic signals. It operates by controlling the flow of current between the collector and emitter terminals based on the current applied to the base terminal.

Detailed Application Field Plans

The BC858AW-G is commonly used in audio amplifiers, sensor circuits, and low-power switching applications due to its high current gain and low noise characteristics. It is also suitable for use in radio frequency (RF) applications where high transition frequency is essential.

Detailed and Complete Alternative Models

1. BC847AW-G: Similar small signal NPN transistor with slightly different specifications
2. BC856AW-G: Complementary PNP transistor for pairing with the BC858AW-G in amplifier circuits
3. 2N3904: General-purpose NPN transistor with comparable characteristics

Note: The alternative models listed above are not exhaustive and serve as examples of similar components available in the market.

This comprehensive entry provides an in-depth understanding of the BC858AW-G transistor, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.