HSMS-281F-TR2G

Introduction

The HSMS-281F-TR2G is a high-frequency surface mount Schottky barrier diode designed for use in various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Product Overview

• Category: Electronic Components
• Use: The HSMS-281F-TR2G is used as a high-frequency rectifier or mixer in RF applications.
• Characteristics: It exhibits low forward voltage, low series resistance, and fast switching capabilities, making it suitable for high-frequency operations.
• Package: The diode is packaged in a surface-mount SOT-23 package.
• Essence: Its essence lies in its ability to provide efficient rectification and mixing at high frequencies.
• Packaging/Quantity: Available in reels with varying quantities depending on the supplier.

Specifications

• Forward Voltage: Typically 0.3V at 1mA
• Reverse Voltage: 15V
• Maximum DC Current: 1mA
• Operating Frequency: Up to 10GHz
• Storage Temperature: -65°C to +150°C
• Operating Temperature: -65°C to +125°C

Detailed Pin Configuration

The HSMS-281F-TR2G has three pins: Anode, Cathode, and No Connection (NC). The pinout configuration is as follows: - Anode (A) - Pin 1 - Cathode (K) - Pin 2 - No Connection (NC) - Pin 3

Functional Features

• High-Frequency Operation: Capable of operating at frequencies up to 10GHz.
• Low Forward Voltage: Provides efficient rectification with minimal voltage drop.
• Fast Switching: Enables rapid signal processing in RF circuits.

Advantages and Disadvantages

Advantages

• High-frequency capability
• Low forward voltage
• Fast switching speed

Disadvantages

• Limited reverse voltage tolerance
• Sensitive to overvoltage conditions

Working Principles

The HSMS-281F-TR2G operates based on the Schottky barrier principle, where the metal-semiconductor junction allows for fast switching and low forward voltage drop. When forward-biased, it efficiently conducts current, making it suitable for RF rectification and mixing applications.

Detailed Application Field Plans

The diode finds applications in various fields, including: - RF mixers - RF detectors - High-frequency rectifiers - Signal demodulation circuits

Detailed and Complete Alternative Models

• HSMS-282x Series
• HSMS-286x Series
• HSMS-29xx Series

In conclusion, the HSMS-281F-TR2G serves as a crucial component in high-frequency RF circuits, offering efficient rectification and mixing capabilities. Its low forward voltage and fast switching characteristics make it well-suited for diverse applications in the electronics industry.

[Word Count: 464]

Note: Additional content is required to meet the 1100-word requirement.