BDW83A-S

Product Overview

Belongs to

The BDW83A-S belongs to the category of power transistors.

Basic Information

• Category: Power Transistor
• Use: Amplification and switching of electrical signals
• Characteristics: High power handling capacity, low collector-emitter saturation voltage
• Package: TO-218
• Essence: High-performance power transistor for various electronic applications
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 15A
• Power Dissipation (Ptot): 80W
• DC Current Gain (hFE): 25 - 160
• Transition Frequency (fT): 2 MHz

Detailed Pin Configuration

The BDW83A-S typically features the following pin configuration: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

• High power handling capability
• Low collector-emitter saturation voltage
• Wide range of DC current gain
• Suitable for high-frequency applications

Advantages and Disadvantages

Advantages

• High power dissipation capacity
• Versatile application range
• Reliable performance in demanding conditions

Disadvantages

• Relatively higher cost compared to standard transistors
• Requires careful thermal management due to high power dissipation

Working Principles

The BDW83A-S operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electrical signals.

Detailed Application Field Plans

The BDW83A-S finds extensive use in various applications, including: - Audio amplifiers - Power supplies - Motor control circuits - RF amplifiers

Detailed and Complete Alternative Models

Some alternative models to the BDW83A-S include: - BDW84C - TIP35C - MJ15003

In conclusion, the BDW83A-S is a high-performance power transistor with versatile applications in electronic circuits requiring high power handling and reliable performance.

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