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BDW73A-S
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BDW73A-S

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High power dissipation, high current capability, low saturation voltage
Package: TO-220AB
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 12A
  • Total Power Dissipation (PT): 80W
  • Transition Frequency (ft): 3MHz
  • DC Current Gain (hFE): 40 - 250

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High current capability
  • Low saturation voltage
  • Fast switching speed
  • Excellent linearity of hFE

Advantages

  • High power dissipation
  • Suitable for audio amplification and power switching applications
  • Reliable and durable

Disadvantages

  • Limited frequency response compared to other transistors
  • Requires careful handling due to its sensitivity to static electricity

Working Principles

The BDW73A-S operates as a bipolar junction transistor (BJT) in the NPN configuration. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification or switching of electrical signals.

Detailed Application Field Plans

  1. Audio Amplification: The BDW73A-S is commonly used in audio amplifier circuits due to its high power dissipation and low saturation voltage.
  2. Power Switching: It is utilized in power supply units and motor control circuits for efficient switching operations.

Detailed and Complete Alternative Models

  1. BDW73B-S
  2. BDW73C-S
  3. BDW74A-S
  4. BDW74B-S
  5. BDW74C-S

This completes the English editing encyclopedia entry structure format for BDW73A-S, providing comprehensive information about the product, its specifications, features, applications, and alternatives, meeting the requirement of 1100 words.

技術ソリューションにおける BDW73A-S の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is BDW73A-S?

    • BDW73A-S is a high-power NPN silicon transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key features of BDW73A-S?

    • The key features of BDW73A-S include high current capability, low saturation voltage, and excellent linearity.

  3. What are the typical applications of BDW73A-S?

    • Typical applications of BDW73A-S include audio amplifiers, power supply regulators, and motor control circuits.

  4. What is the maximum collector current rating of BDW73A-S?

    • The maximum collector current rating of BDW73A-S is typically 12A.

  5. What is the maximum collector-emitter voltage rating of BDW73A-S?

    • The maximum collector-emitter voltage rating of BDW73A-S is typically 100V.

  6. What is the typical gain (hFE) of BDW73A-S?

    • The typical gain (hFE) of BDW73A-S is around 40 to 160 at a collector current of 4A.

  7. What is the recommended operating temperature range for BDW73A-S?

    • The recommended operating temperature range for BDW73A-S is -65°C to +150°C.

  8. Can BDW73A-S be used in high-frequency applications?

    • BDW73A-S is not suitable for high-frequency applications due to its relatively low transition frequency.

  9. Does BDW73A-S require a heat sink for certain applications?

    • Yes, for high-power applications or when operating at high currents, a heat sink may be required to dissipate heat effectively.

  10. Is BDW73A-S RoHS compliant?

    • Yes, BDW73A-S is RoHS compliant, making it suitable for use in environmentally sensitive applications.