BDW63D-S

Product Overview

Belongs to: Power Transistor
Category: Electronic Component
Use: Amplification and Switching in Power Circuits
Characteristics: High power handling capacity, low collector-emitter saturation voltage
Package: TO-220AB
Essence: NPN Bipolar Junction Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 15A
• Power Dissipation (Pd): 125W
• DC Current Gain (hFE): 25 - 250
• Transition Frequency (fT): 4MHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed
• Excellent linearity

Advantages

• High power handling capability
• Versatile applications
• Reliable performance

Disadvantages

• Sensitive to temperature variations
• Requires careful thermal management

Working Principles

The BDW63D-S operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

1. Audio Amplification: Utilized in audio amplifiers for high-power output stages.
2. Power Supplies: Integrated into power supply circuits for efficient regulation and control.
3. Motor Control: Employed in motor driver circuits for controlling high-current loads.

Detailed and Complete Alternative Models

1. BDW64D-S
2. TIP35C
3. MJ15003

Note: The above alternative models offer similar characteristics and can be used as substitutes for BDW63D-S.

This comprehensive entry provides a detailed insight into the BDW63D-S power transistor, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.