BLS7G2729L-350P,11

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SMD (Surface Mount Device) - Essence: Power Amplification - Packaging/Quantity: Tape and Reel, 500 units per reel

Specifications: - Frequency Range: 2.7 - 2.9 GHz - Power Output: 350 Watts - Gain: 11 dB - Voltage: 28 V - Efficiency: 60%

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: Bias - Pin 4: RF Output

Functional Features: - High Power Gain - Broadband Performance - High Efficiency - Thermally Enhanced Package

Advantages: - High Power Output - Wide Frequency Range - Compact Size - Excellent Linearity

Disadvantages: - High Cost - Sensitivity to Voltage Variations

Working Principles: The BLS7G2729L-350P,11 operates on the principle of amplifying radio frequency signals using high-frequency transistors in a class-AB configuration. The input signal is amplified and delivered to the output with minimal distortion and high efficiency.

Detailed Application Field Plans: - Telecommunications Infrastructure - Radar Systems - Satellite Communications - Test and Measurement Equipment

Detailed and Complete Alternative Models: - BLS7G2729L-300P,11 - BLS7G2829L-350P,11 - BLS7G2729L-350P,12

This product belongs to the category of RF power transistors and is primarily used for amplifying radio frequency signals. It is characterized by its high power output, high frequency range, and low distortion. The package is a surface mount device, and it is available in tape and reel packaging with 500 units per reel. The detailed pin configuration includes RF input, ground, bias, and RF output pins. The functional features of this product include high power gain, broadband performance, high efficiency, and a thermally enhanced package. Its advantages include high power output, wide frequency range, compact size, and excellent linearity. However, it is important to note that it comes with a high cost and sensitivity to voltage variations. The working principles of this product involve amplifying radio frequency signals using high-frequency transistors in a class-AB configuration. Its detailed application field plans include telecommunications infrastructure, radar systems, satellite communications, and test and measurement equipment. Additionally, alternative models such as BLS7G2729L-300P,11, BLS7G2829L-350P,11, and BLS7G2729L-350P,12 are available for consideration.