BLL8H1214L-250U Product Overview

Introduction

The BLL8H1214L-250U is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: RF Transistor
• Use: Power amplification in RF applications
• Characteristics: High power handling, high frequency operation
• Package: TO-272-4L
• Essence: High-power RF amplification
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Model: BLL8H1214L-250U
• Frequency Range: 800MHz - 1GHz
• Power Output: 250W
• Voltage: 28V
• Current: 14A
• Gain: 15dB
• Efficiency: 70%

Detailed Pin Configuration

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain
• Pin 4: Ground

Functional Features

• High power output capability
• Broad frequency range operation
• High efficiency
• Excellent gain characteristics

Advantages

• High power handling capacity
• Wide frequency coverage
• Efficient power usage
• Reliable performance

Disadvantages

• Sensitive to voltage fluctuations
• Heat dissipation requirements

Working Principles

The BLL8H1214L-250U operates on the principle of amplifying RF signals by controlling the flow of current between the source and drain terminals. The input signal at the gate terminal controls the output power at the drain terminal, allowing for high-power amplification.

Detailed Application Field Plans

The BLL8H1214L-250U is suitable for use in: - Broadcast transmitters - Radar systems - RF heating applications - Industrial RF equipment

Detailed and Complete Alternative Models

• Model 1: BLL8H1214L-200U
• Model 2: BLL8H1214L-300U
• Model 3: BLL8H1214L-350U

In summary, the BLL8H1214L-250U is a high-power RF transistor with excellent amplification capabilities, making it suitable for a wide range of RF applications.

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