BLF8G20LS-260A,118

Introduction

The BLF8G20LS-260A,118 is a high-power LDMOS transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Components
• Use: Power Amplification
• Characteristics: High Power, Low Distortion
• Package: SOT539A
• Essence: LDMOS Transistor
• Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications

• Frequency Range: 0.01 to 2.5 GHz
• Output Power: 260 Watts
• Gain: 20 dB
• Efficiency: 65%
• Voltage: 32 V
• Current: 14 A
• Thermal Resistance: 0.25 °C/W

Detailed Pin Configuration

The BLF8G20LS-260A,118 features a 4-pin layout: 1. Gate 2. Drain 3. Source 4. Ground

Functional Features

• High Power Output
• Broad Frequency Range
• Excellent Linearity
• Thermal Stability

Advantages and Disadvantages

Advantages: - High Power Handling Capability - Wide Frequency Coverage - Low Distortion - Reliable Thermal Performance

Disadvantages: - Higher Cost Compared to Lower Power Alternatives - Requires Adequate Heat Dissipation

Working Principles

The BLF8G20LS-260A,118 operates on the principle of utilizing LDMOS technology to amplify RF signals with high power and efficiency. By applying a suitable bias voltage, the device allows for the amplification of input signals while maintaining low distortion and high linearity.

Detailed Application Field Plans

This transistor is ideally suited for use in high-power RF amplifiers, such as those found in base stations, radar systems, and industrial heating equipment. Its capabilities make it suitable for applications requiring high power amplification within the frequency range of 0.01 to 2.5 GHz.

Detailed and Complete Alternative Models

• BLF7G22LS-240B,112
• BLF6G22LS-250P,115
• BLF9G15LS-300C,119

In summary, the BLF8G20LS-260A,118 is a high-power LDMOS transistor with exceptional performance characteristics, making it an ideal choice for demanding RF amplification applications within the specified frequency range.

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