BLF7G27L-135,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SMD (Surface Mount Device) - Essence: Efficient RF Power Amplification - Packaging/Quantity: Tape and Reel, 500 units per reel

Specifications: - Frequency Range: 700 MHz to 2700 MHz - Output Power: 135 Watts - Gain: 12 dB - Efficiency: 65% - Voltage: 28 V - Current: 16 A

Detailed Pin Configuration: - Pin 1: RF Input - Pin 2: Ground - Pin 3: RF Output - Pin 4: Bias

Functional Features: - High Linearity - Wide Frequency Range - Thermally Enhanced Package - Integrated ESD Protection

Advantages: - High Power Output - Broadband Capability - Reliable Performance - Compact Size

Disadvantages: - Higher Cost Compared to Lower Power Alternatives - Requires Adequate Heat Dissipation

Working Principles: The BLF7G27L-135,112 operates on the principle of amplifying RF signals using a combination of high-frequency transistors and efficient power handling capabilities. It utilizes advanced semiconductor technology to achieve high power amplification with minimal distortion.

Detailed Application Field Plans: - Cellular Base Stations - Radar Systems - Wireless Communication Infrastructure - Satellite Communication Systems

Detailed and Complete Alternative Models: - BLF888A - 100W LDMOS Transistor - MRF13750H - 150W RF Power Transistor - MGFC47G2736 - 120W GaN HEMT

This comprehensive entry provides an in-depth understanding of the BLF7G27L-135,112, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.