BLF7G21L-160P,112
Product Overview
Category
The BLF7G21L-160P,112 belongs to the category of RF power transistors.
Use
It is used in high-frequency applications such as radio frequency (RF) amplifiers and transmitters.
Characteristics
- High power handling capability
- Wide frequency range
- Low distortion
- High efficiency
Package
The BLF7G21L-160P,112 comes in a compact and durable package suitable for surface mount technology (SMT) assembly.
Essence
This product is essential for achieving high-power RF amplification in various communication and broadcasting systems.
Packaging/Quantity
The BLF7G21L-160P,112 is typically packaged in reels or trays, with quantities varying based on customer requirements.
Specifications
- Frequency Range: 1.8 - 2.2 GHz
- Output Power: 160 Watts
- Gain: 21 dB
- Efficiency: >60%
- Package Type: SOT539A
Detailed Pin Configuration
The BLF7G21L-160P,112 features a detailed pin configuration that includes input, output, bias, and thermal connections, ensuring proper integration into RF amplifier circuits.
Functional Features
- High linearity
- Broadband performance
- Excellent thermal stability
- Built-in protection features
Advantages and Disadvantages
Advantages
- High power output
- Wide frequency coverage
- Reliable performance
- Compact form factor
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful thermal management
Working Principles
The BLF7G21L-160P,112 operates based on the principles of class AB RF power amplification, utilizing advanced semiconductor technology to achieve high efficiency and linearity.
Detailed Application Field Plans
This product is well-suited for use in: - Cellular base stations - Radar systems - Broadcast transmitters - Satellite communications
Detailed and Complete Alternative Models
- BLF888A: Lower power alternative for cost-sensitive applications
- BLF2425M6L-130P: Higher frequency alternative for specialized RF systems
- BLF578XR: Extended frequency range alternative for multi-band applications
In conclusion, the BLF7G21L-160P,112 is a high-performance RF power transistor designed for demanding applications requiring high power and wide frequency coverage. Its advanced features and robust design make it an ideal choice for modern communication and broadcasting systems.
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技術ソリューションにおける BLF7G21L-160P,112 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the operating frequency of BLF7G21L-160P,112?
- The operating frequency of BLF7G21L-160P,112 is in the range of 2.5 to 2.7 GHz.
What is the typical output power of BLF7G21L-160P,112?
- The typical output power of BLF7G21L-160P,112 is around 160 Watts.
What type of modulation schemes is BLF7G21L-160P,112 suitable for?
- BLF7G21L-160P,112 is suitable for various modulation schemes including QPSK, QAM, and OFDM.
What is the recommended supply voltage for BLF7G21L-160P,112?
- The recommended supply voltage for BLF7G21L-160P,112 is typically 32 V.
What are the typical applications for BLF7G21L-160P,112?
- BLF7G21L-160P,112 is commonly used in wireless infrastructure applications such as base stations and small cell systems.
Does BLF7G21L-160P,112 require external matching networks?
- Yes, BLF7G21L-160P,112 requires external matching networks for optimal performance.
What is the thermal resistance of BLF7G21L-160P,112?
- The thermal resistance of BLF7G21L-160P,112 is typically around 0.35°C/W.
Is BLF7G21L-160P,112 RoHS compliant?
- Yes, BLF7G21L-160P,112 is RoHS compliant, ensuring it meets environmental standards.
What is the recommended bias conditions for BLF7G21L-160P,112?
- The recommended bias conditions for BLF7G21L-160P,112 include a quiescent current of 150 mA and a quiescent voltage of 32 V.
Are evaluation boards or reference designs available for BLF7G21L-160P,112?
- Yes, evaluation boards and reference designs are available to aid in the application of BLF7G21L-160P,112 in technical solutions.