BLF6G27-135,112

Product Overview

Category: RF Power Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high efficiency, broadband
Package: SOT539A
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Frequency Range: 2400 - 2500 MHz
• Output Power: 135 W
• Efficiency: 65%
• Gain: 17 dB
• Voltage: 32 V
• Current: 14 A
• Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

1. Gate
2. Drain
3. Source
4. Ground

Functional Features

• High power density
• Broadband performance
• High linearity
• Integrated ESD protection

Advantages and Disadvantages

Advantages: - High power output - Wide operating temperature range - High efficiency

Disadvantages: - Sensitive to voltage spikes - Higher cost compared to traditional transistors

Working Principles

The BLF6G27-135,112 utilizes GaN technology to amplify radio frequency signals. When a signal is applied to the gate, the transistor allows a larger current to flow from the drain to the source, effectively amplifying the input signal.

Detailed Application Field Plans

1. Telecommunications: Used in base stations for cellular networks.
2. Radar Systems: Employed in radar transmitters for military and civilian applications.
3. Wireless Infrastructure: Utilized in wireless communication infrastructure equipment.

Detailed and Complete Alternative Models

1. BLF888A - Similar power output with enhanced ruggedness
2. BLF2425M7L - Lower power output but higher efficiency
3. BLF578XR - Higher power output with narrower frequency range

This comprehensive entry provides an in-depth understanding of the BLF6G27-135,112 RF Power Transistor, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.