BLF6G20LS-140,118
Product Overview
Category
The BLF6G20LS-140,118 belongs to the category of RF power transistors.
Use
It is used for high-frequency amplification in various applications such as radio frequency (RF) communication systems, radar systems, and industrial heating equipment.
Characteristics
- High power gain
- High efficiency
- Broadband capability
- Excellent thermal stability
Package
The BLF6G20LS-140,118 is typically available in a compact and rugged SOT539A package.
Essence
The essence of this product lies in its ability to provide high-power amplification with high efficiency and thermal stability.
Packaging/Quantity
The BLF6G20LS-140,118 is usually supplied in reels containing a specific quantity based on customer requirements.
Specifications
- Frequency range: 470-860 MHz
- Output power: 20 W
- Efficiency: >50%
- Gain: >15 dB
- Operating voltage: 28 V
- Operating temperature: -40°C to +150°C
Detailed Pin Configuration
The BLF6G20LS-140,118 has a detailed pin configuration that includes input, output, and biasing pins. The pinout diagram provides a clear understanding of the connections required for proper operation.
Functional Features
- High linearity
- Wide bandwidth
- Excellent ruggedness
- Built-in ESD protection
Advantages
- High power output
- Wide operating temperature range
- Suitable for broadband applications
- Robust and reliable performance
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful handling due to ESD sensitivity
Working Principles
The BLF6G20LS-140,118 operates based on the principles of RF power amplification using advanced semiconductor technology. It utilizes a combination of high gain and efficiency to amplify RF signals while maintaining stability across a wide frequency range.
Detailed Application Field Plans
The BLF6G20LS-140,118 is ideally suited for use in: - Base stations for cellular communication - Broadcast transmitters - Radar systems - Industrial heating equipment
Detailed and Complete Alternative Models
Some alternative models to the BLF6G20LS-140,118 include: - BLF888A - BLF578XR - BLF2425M7L
In conclusion, the BLF6G20LS-140,118 is a high-performance RF power transistor designed for demanding applications that require high power amplification, efficiency, and thermal stability. Its robust design and functional features make it a preferred choice for various RF communication and industrial applications.
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技術ソリューションにおける BLF6G20LS-140,118 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the maximum power dissipation of BLF6G20LS-140,118?
- The maximum power dissipation of BLF6G20LS-140,118 is 20 watts.
What is the typical gain of BLF6G20LS-140,118 at 2.14 GHz?
- The typical gain of BLF6G20LS-140,118 at 2.14 GHz is 17 dB.
What is the operating frequency range of BLF6G20LS-140,118?
- The operating frequency range of BLF6G20LS-140,118 is from 2110 MHz to 2170 MHz.
What is the recommended supply voltage for BLF6G20LS-140,118?
- The recommended supply voltage for BLF6G20LS-140,118 is 28 volts.
What is the typical efficiency of BLF6G20LS-140,118 at 2.14 GHz?
- The typical efficiency of BLF6G20LS-140,118 at 2.14 GHz is 45%.
What is the input and output impedance of BLF6G20LS-140,118?
- The input and output impedance of BLF6G20LS-140,118 is 50 ohms.
What is the maximum input power of BLF6G20LS-140,118?
- The maximum input power of BLF6G20LS-140,118 is 29 dBm.
What is the recommended bias current for BLF6G20LS-140,118?
- The recommended bias current for BLF6G20LS-140,118 is 1000 mA.
What are the typical applications for BLF6G20LS-140,118?
- BLF6G20LS-140,118 is commonly used in base station amplifiers and other wireless infrastructure applications.
What are the thermal resistance values for BLF6G20LS-140,118?
- The thermal resistance values for BLF6G20LS-140,118 are 0.8°C/W (junction to case) and 150°C/W (junction to ambient).