BLF647PSJ Encyclopedia Entry

Product Overview

Use

It is used in high-frequency applications such as radio frequency (RF) amplifiers and transmitters.

Characteristics

High power handling capability
High frequency operation
Low distortion
High efficiency

Package

The BLF647PSJ is typically available in a metal-ceramic package for enhanced thermal performance.

Essence

The essence of the BLF647PSJ lies in its ability to amplify high-frequency signals with high power and low distortion.

Packaging/Quantity

It is usually packaged individually and quantities may vary based on supplier and customer requirements.

Specifications

Frequency Range: 470-860 MHz
Output Power: 50 W
Gain: 17 dB
Efficiency: >40%
Operating Voltage: 28 V
Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

The BLF647PSJ typically has a pin configuration consisting of input, output, and biasing pins. The specific pinout can be found in the datasheet provided by the manufacturer.

Functional Features

High power amplification
Broadband frequency operation
High linearity
Thermal stability

Advantages

High power handling capability
Wide frequency range
Low distortion
Suitable for high-efficiency applications

Disadvantages

Higher cost compared to lower power transistors
Requires careful thermal management due to high power dissipation

Working Principles

The BLF647PSJ operates based on the principles of RF amplification using high-power semiconductor technology. It amplifies the input RF signal while maintaining linearity and efficiency.

Detailed Application Field Plans

The BLF647PSJ is commonly used in: - Broadcast transmitters - Cellular base stations - Radar systems - High-power RF amplifiers

Detailed and Complete Alternative Models

BLF648PSJ
MRF151G
MRFE6VP61K25H

In conclusion, the BLF647PSJ is a high-power RF transistor designed for demanding high-frequency applications where power, linearity, and efficiency are crucial factors.

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