Ampleon USA Inc.
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BLF178P,112
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BLF178P,112

Product Overview

Category

The BLF178P,112 belongs to the category of RF power transistors.

Use

It is used in high-power RF applications such as industrial, scientific, and medical (ISM) equipment, broadcast transmitters, and radar systems.

Characteristics

  • High power handling capability
  • Broadband frequency range
  • High efficiency
  • Excellent linearity

Package

The BLF178P,112 comes in a ceramic package for enhanced thermal performance and reliability.

Essence

This transistor is essential for amplifying RF signals with high power requirements.

Packaging/Quantity

The BLF178P,112 is typically available in tape and reel packaging with a quantity of 250 units per reel.

Specifications

  • Frequency Range: 470 MHz to 860 MHz
  • Output Power: Up to 600 Watts
  • Gain: 18 dB
  • Efficiency: 70%
  • Operating Voltage: 32V
  • Operating Temperature: -65°C to +200°C

Detailed Pin Configuration

The BLF178P,112 has a 4-pin flange package with the following pin configuration: 1. Gate 1 2. Drain 3. Source 4. Gate 2

Functional Features

  • High power amplification
  • Wide frequency coverage
  • Robust and reliable operation
  • Suitable for various modulation schemes

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Wide frequency range
  • High efficiency
  • Reliable ceramic package

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The BLF178P,112 operates based on the principles of field-effect transistors (FETs), utilizing its high-power handling capability and gain to amplify RF signals across a wide frequency range.

Detailed Application Field Plans

The BLF178P,112 is widely used in the following application fields: - Broadcast transmitters - Radar systems - Industrial RF heating equipment - Medical diathermy machines - Scientific research equipment

Detailed and Complete Alternative Models

Some alternative models to BLF178P,112 include: - BLF888A - BLF578XR - BLF278

In conclusion, the BLF178P,112 is a high-power RF transistor with broad frequency coverage and high efficiency, making it suitable for various high-power RF applications. Its robust design and reliable performance make it a popular choice in the industry.

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技術ソリューションにおける BLF178P,112 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum operating frequency of BLF178P,112?

    • The maximum operating frequency of BLF178P,112 is typically up to 500 MHz.

  2. What is the maximum output power of BLF178P,112?

    • The maximum output power of BLF178P,112 is approximately 160 watts.

  3. What are the typical applications for BLF178P,112?

    • BLF178P,112 is commonly used in industrial, scientific, and medical (ISM) applications, as well as in radio and television broadcasting.

  4. What is the recommended supply voltage for BLF178P,112?

    • The recommended supply voltage for BLF178P,112 is typically around 50 volts.

  5. What is the typical gain of BLF178P,112?

    • The typical gain of BLF178P,112 is around 17 dB.

  6. What are the thermal characteristics of BLF178P,112?

    • BLF178P,112 has a junction temperature of 200°C and a thermal resistance of 0.7°C/W.

  7. What are the key features of BLF178P,112?

    • BLF178P,112 features high efficiency, high ruggedness, and excellent thermal stability.

  8. What are the recommended bias conditions for BLF178P,112?

    • The recommended bias conditions for BLF178P,112 include a quiescent current of 150 mA and a quiescent voltage of 32 volts.

  9. What are the typical intermodulation distortion characteristics of BLF178P,112?

    • The typical intermodulation distortion characteristics of BLF178P,112 are around -30 dBc at 10 watts average power.

  10. What are the common failure modes of BLF178P,112?

    • Common failure modes of BLF178P,112 include overvoltage, overcurrent, and excessive heat dissipation.