BLF175,112
Product Category: RF Power Transistor
Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power, high frequency operation - Package: SOT539A - Essence: High efficiency and linearity - Packaging/Quantity: Tape and reel, 800 units per reel
Specifications: - Frequency Range: 470-860 MHz - Output Power: 175 W - Gain: 17.5 dB - Efficiency: 30% - Voltage: 32 V - Current: 14 A
Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not connected - Pin 5: Not connected
Functional Features: - High power gain - Excellent thermal stability - Integrated ESD protection - High efficiency at specified frequencies
Advantages: - High output power capability - Wide frequency range - Good thermal stability
Disadvantages: - Limited voltage and current ratings - Sensitivity to improper handling
Working Principles: The BLF175,112 operates based on the principles of field-effect transistors, utilizing the control of an electric field applied to the gate terminal to modulate the flow of current between the source and drain terminals.
Detailed Application Field Plans: - Broadcast transmitters - Cellular base stations - Radar systems - Industrial heating equipment
Detailed and Complete Alternative Models: - BLF177 - BLF178 - BLF888A
This comprehensive entry provides a detailed overview of the BLF175,112 RF Power Transistor, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
What is the maximum operating frequency of BLF175,112?
What is the typical gain of BLF175,112?
What is the maximum output power of BLF175,112?
What are the typical applications for BLF175,112?
What is the recommended supply voltage for BLF175,112?
What are the thermal characteristics of BLF175,112?
What are the typical input and output impedance values for BLF175,112?
Is BLF175,112 suitable for broadband applications?
What are the recommended biasing conditions for BLF175,112?
Are there any specific layout considerations when using BLF175,112 in a circuit?