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BLF174XR,112
詳細を表示 DataSheets

BLF174XR,112 Product Overview

Category

The BLF174XR,112 belongs to the category of RF power transistors.

Use

It is primarily used in high-power RF applications such as broadcast transmitters, industrial heating, and medical equipment.

Characteristics

  • High power handling capability
  • Broad frequency range
  • High efficiency
  • Excellent linearity

Package

The BLF174XR,112 comes in a compact and robust package suitable for high-power applications.

Essence

This transistor is essential for amplifying RF signals with high power requirements.

Packaging/Quantity

The BLF174XR,112 is typically packaged individually and is available in various quantities depending on the supplier.

Specifications

  • Frequency Range: 470 - 860 MHz
  • Output Power: 600 W
  • Gain: 18 dB
  • Efficiency: >70%
  • Voltage: 32 V
  • Current: 30 A

Detailed Pin Configuration

The BLF174XR,112 features a detailed pin configuration with specific connections for gate, drain, and source terminals. Refer to the datasheet for the exact pinout details.

Functional Features

  • High power amplification
  • Wide frequency coverage
  • Robust construction for reliability
  • Suitable for continuous wave and pulsed applications

Advantages

  • High power handling capability
  • Wide frequency range
  • High efficiency
  • Reliable performance under demanding conditions

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The BLF174XR,112 operates based on the principles of RF amplification using advanced semiconductor technology to achieve high power output with minimal distortion.

Detailed Application Field Plans

  • Broadcast Transmitters: Used in high-power TV and radio broadcast transmitters for efficient signal amplification.
  • Industrial Heating: Employed in RF heating systems for industrial processes such as plastic welding and drying.
  • Medical Equipment: Utilized in medical devices requiring high-power RF energy, such as MRI machines and diathermy equipment.

Detailed and Complete Alternative Models

  • BLF178XR,112
  • BLF177XR,112
  • BLF175XR,112

In conclusion, the BLF174XR,112 RF power transistor offers high power handling, wide frequency coverage, and reliable performance, making it an essential component in various high-power RF applications.

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技術ソリューションにおける BLF174XR,112 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum operating frequency of BLF174XR,112?

    • The maximum operating frequency of BLF174XR,112 is typically 2500 MHz.

  2. What is the typical output power of BLF174XR,112?

    • The typical output power of BLF174XR,112 is around 175 watts.

  3. What is the recommended supply voltage for BLF174XR,112?

    • The recommended supply voltage for BLF174XR,112 is typically 32 volts.

  4. What are the typical applications for BLF174XR,112?

    • BLF174XR,112 is commonly used in RF power amplifiers for industrial, scientific, and medical (ISM) applications.

  5. What is the typical gain of BLF174XR,112?

    • The typical gain of BLF174XR,112 is around 17 dB.

  6. What is the thermal resistance of BLF174XR,112?

    • The thermal resistance of BLF174XR,112 is typically 0.7°C/W.

  7. What are the key features of BLF174XR,112?

    • BLF174XR,112 features high efficiency, high ruggedness, and excellent thermal stability.

  8. What is the recommended bias conditions for BLF174XR,112?

    • The recommended bias conditions for BLF174XR,112 include a quiescent current of 150 mA and a quiescent voltage of 32 V.

  9. What are the typical input and output impedances of BLF174XR,112?

    • The typical input and output impedances of BLF174XR,112 are 50 ohms.

  10. What are the environmental compliance standards for BLF174XR,112?

    • BLF174XR,112 complies with RoHS and REACH environmental standards.