BLD6G22LS-50,112
Product Overview
Category
The BLD6G22LS-50,112 belongs to the category of power transistors.
Use
It is used for amplification and switching of electronic signals in various applications.
Characteristics
- High power handling capacity
- Low on-state resistance
- Fast switching speed
- High frequency capability
Package
The BLD6G22LS-50,112 is typically available in a TO-220F package.
Essence
This product is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
The BLD6G22LS-50,112 is usually packaged individually and comes in varying quantities depending on the supplier.
Specifications
- Maximum Power Dissipation: 30W
- Continuous Drain Current: 6A
- Drain-Source Voltage: 600V
- On-State Resistance: 1.2Ω
- Input Capacitance: 900pF
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The BLD6G22LS-50,112 has a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability
- Low input and output capacitance
- Enhanced avalanche energy capability
- Suitable for high-speed switching applications
Advantages
- Efficient power handling
- Fast switching speed
- Suitable for high-frequency applications
- Enhanced reliability and ruggedness
Disadvantages
- Higher cost compared to standard transistors
- Requires careful handling due to its sensitivity to static electricity
Working Principles
The BLD6G22LS-50,112 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The BLD6G22LS-50,112 is commonly used in the following application fields: - Switching power supplies - Motor control systems - Audio amplifiers - LED lighting systems - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the BLD6G22LS-50,112 include: - IRF540N - FQP30N06L - STP16NF06FP - MTP3055VL
In conclusion, the BLD6G22LS-50,112 is a versatile power transistor with high power handling capabilities, fast switching speed, and suitability for various high-frequency applications. Its use in power management and control makes it an essential component in modern electronic circuits.
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