AIS12N04AN024-2M

Product Overview

Category

The AIS12N04AN024-2M belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various applications, including power supplies, motor control, and lighting systems.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The AIS12N04AN024-2M is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 40V
• Continuous Drain Current (ID): 120A
• On-Resistance (RDS(on)): 12mΩ
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V

Detailed Pin Configuration

The AIS12N04AN024-2M typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High current-carrying capability
• Low conduction losses
• Enhanced thermal performance
• Compatibility with standard drive circuits

Advantages

• Efficient power handling
• Reduced heat dissipation
• Improved system reliability
• Enhanced circuit performance

Disadvantages

• Sensitive to electrostatic discharge (ESD)
• Higher cost compared to traditional bipolar junction transistors (BJTs)

Working Principles

The AIS12N04AN024-2M operates based on the principle of field-effect, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

1. Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation.
2. Motor Control: Integrated into motor drive circuits for precise speed and torque control.
3. Lighting Systems: Employed in LED drivers and ballast circuits for optimal energy conversion.

Detailed and Complete Alternative Models

1. AIS12N04AN025-2M: Similar specifications with a slightly higher drain-source voltage rating.
2. AIS10N04AN024-2M: Lower on-resistance with comparable current and voltage ratings.
3. AIS12N04AN024-1M: Variant with lower power dissipation and gate-source voltage ratings.

In conclusion, the AIS12N04AN024-2M power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, providing efficient power management and control capabilities.

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