AS6C4016A-55ZIN

Product Overview

Category

AS6C4016A-55ZIN belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

AS6C4016A-55ZIN is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS6C4016A-55ZIN lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS6C4016A-55ZIN is typically packaged in reels or trays, with each reel containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4M x 16 bits
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Standby Current: 10 microamps (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AS6C4016A-55ZIN has a total of 44 pins. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A18)
5. Data Inputs/Outputs (DQ0-DQ15)
6. Power Supply (Vcc)
7. Ground (GND)

Please refer to the datasheet for a complete pinout diagram and detailed pin descriptions.

Functional Features

• Random access to any memory location
• Non-volatile storage (data retention even when power is removed)
• High-speed data transfer
• Low power consumption in standby mode
• Easy integration with various microcontrollers and processors

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Low power consumption helps conserve energy
• Large storage capacity accommodates a wide range of applications
• Compact package size enables space-efficient designs
• Reliable performance ensures data integrity

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Vulnerable to electromagnetic interference (EMI) and electrostatic discharge (ESD)

Working Principles

AS6C4016A-55ZIN operates based on the principles of static random access memory. It utilizes flip-flops to store each bit of data, which eliminates the need for constant refreshing. The stored data can be accessed randomly by providing the appropriate address.

Detailed Application Field Plans

AS6C4016A-55ZIN finds application in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Automotive electronics - Industrial control systems - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

• AS6C4016-55BIN
• AS6C4016-55SIN
• AS6C4016-55TIN
• AS6C4016-55GIN
• AS6C4016-55PIN

These alternative models offer similar specifications and functionality, providing options for different design requirements and supply chain availability.

In conclusion, AS6C4016A-55ZIN is a high-performance semiconductor memory device that offers fast and reliable data storage capabilities. Its compact size, low power consumption, and large storage capacity make it suitable for a wide range of applications in various industries.