AS6C1008-55TINL

Product Overview

Category

AS6C1008-55TINL belongs to the category of semiconductor memory products.

Use

It is primarily used as a static random-access memory (SRAM) device.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Reliable data retention
• Easy integration with other electronic components

Package

AS6C1008-55TINL is available in a compact and durable package, designed to protect the memory chip from external factors such as moisture and physical damage.

Essence

The essence of AS6C1008-55TINL lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, containing a specific quantity of AS6C1008-55TINL chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Size: 1 Megabit (128K x 8 bits)
• Operating Voltage: 2.7V - 5.5V
• Access Time: 55 nanoseconds
• Standby Current: 10 microamps (max)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years (minimum)

Detailed Pin Configuration

AS6C1008-55TINL follows a standard pin configuration for SRAM devices:

1. Chip Enable (/CE)
2. Output Enable (/OE)
3. Write Enable (/WE)
4. Address Inputs (A0-A16)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (Vcc)
7. Ground (GND)

Functional Features

• Random access to any memory location
• Simultaneous read and write operations
• Low power consumption in standby mode
• Easy interfacing with microcontrollers and other digital systems

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access
• Low power consumption prolongs battery life in portable devices
• Non-volatile storage ensures data retention even during power loss
• Reliable performance in various temperature conditions
• Compatibility with a wide range of electronic systems

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to dynamic random-access memory (DRAM)
• Susceptible to electromagnetic interference (EMI) due to its volatile nature

Working Principles

AS6C1008-55TINL operates based on the principles of static random-access memory. It uses flip-flops to store each bit of data, which eliminates the need for constant refreshing like dynamic RAM. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

AS6C1008-55TINL finds applications in various fields, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial automation - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AS6C1008-55TINL include: - AS6C1008-55BINL - AS6C1008-55PCN - AS6C1008-55SINL - AS6C1008-55TCTR

These models may have slight variations in specifications or packaging options, but they serve the same purpose as AS6C1008-55TINL.

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