AS4C8M32S-6BINTR

Product Overview

Category

AS4C8M32S-6BINTR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance: AS4C8M32S-6BINTR offers fast read and write speeds, allowing for efficient data processing.
• Large storage capacity: With a capacity of 8 megabytes (MB) and 32 bits per word, this product provides ample space for storing various types of data.
• Low power consumption: AS4C8M32S-6BINTR is designed to consume minimal power, making it suitable for battery-powered devices.
• Reliable operation: This product ensures reliable data storage and retrieval, minimizing the risk of data loss or corruption.
• Compact package: AS4C8M32S-6BINTR comes in a compact form factor, enabling easy integration into electronic devices.

Packaging/Quantity

AS4C8M32S-6BINTR is typically packaged in a small outline integrated circuit (SOIC) package. It is available in quantities ranging from single units to bulk orders.

Specifications

• Part Number: AS4C8M32S-6BINTR
• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 8 Megabytes (MB) x 32 bits
• Speed Grade: 6
• Operating Voltage: 3.3V
• Package Type: Small Outline Integrated Circuit (SOIC)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of AS4C8M32S-6BINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. DQ16
21. DQ17
22. DQ18
23. DQ19
24. DQ20
25. DQ21
26. DQ22
27. DQ23
28. VSS
29. DQ24
30. DQ25
31. DQ26
32. DQ27
33. DQ28
34. DQ29
35. DQ30
36. DQ31
37. VSS
38. A0
39. A1
40. A2
41. A3
42. A4
43. A5
44. A6
45. A7
46. VSS
47. WE#
48. CAS#

Functional Features

• Burst Mode: AS4C8M32S-6BINTR supports burst mode operation, allowing for faster data transfer between the memory and the device.
• Auto Refresh: This product features auto-refresh capability, ensuring the integrity of stored data over time.
• Self-Timed Write Cycle: AS4C8M32S-6BINTR incorporates a self-timed write cycle, simplifying the writing process and enhancing overall system performance.

Advantages and Disadvantages

Advantages

• High-speed performance enables efficient data processing.
• Large storage capacity accommodates various types of data.
• Low power consumption prolongs battery life in portable devices.
• Reliable operation minimizes the risk of data loss or corruption.

Disadvantages

• Limited compatibility: AS4C8M32S-6BINTR may not be compatible with all electronic devices due to differences in interface and voltage requirements.
• Cost: This product may have a higher price compared to alternative memory options.

Working Principles

AS4C8M32S-6BINTR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in a matrix of capacitors, which are periodically refreshed to maintain data integrity. The memory controller synchronizes data transfers between the memory and the device, ensuring accurate and timely retrieval of stored information.

Detailed Application Field Plans

AS4C8M32S-6BINTR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to AS4C8M32S-6BINTR include: - AS4C8M32S-6BINT