AS4C8M16S-6TANTR

Product Overview

Category

AS4C8M16S-6TANTR belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage component in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Non-volatile memory
• Low power consumption
• Compact size

Package

AS4C8M16S-6TANTR is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of AS4C8M16S-6TANTR lies in its ability to store and retrieve data quickly and efficiently, enhancing the overall performance of electronic devices.

Packaging/Quantity

AS4C8M16S-6TANTR is typically packaged in trays or reels, with each package containing a specific quantity of memory modules.

Specifications

• Model: AS4C8M16S-6TANTR
• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 8 Megabits x 16 bits
• Speed: 6 nanoseconds
• Operating Voltage: 3.3 volts
• Interface: Parallel
• Organization: 8 banks of 2,048 rows x 1,024 columns

Detailed Pin Configuration

The pin configuration of AS4C8M16S-6TANTR is as follows:

1. VDD - Power supply voltage
2. DQ0-DQ15 - Data input/output pins
3. A0-A10 - Address input pins
4. BA0-BA1 - Bank address pins
5. CAS - Column address strobe
6. RAS - Row address strobe
7. WE - Write enable
8. CKE - Clock enable
9. CLK - Clock input
10. VSS - Ground

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination for improved signal integrity
• Internal pipelined architecture for enhanced performance

Advantages and Disadvantages

Advantages

• Fast data access speed improves overall system performance
• Low power consumption prolongs battery life in portable devices
• Compact size allows for integration into space-constrained designs
• On-die termination reduces the need for external components

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to some alternative models
• Sensitivity to electrostatic discharge (ESD) requires careful handling during installation

Working Principles

AS4C8M16S-6TANTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a digital format using capacitors, which are periodically refreshed to maintain the stored information. The memory controller synchronizes the read and write operations with the clock signal, ensuring accurate data transfer.

Detailed Application Field Plans

AS4C8M16S-6TANTR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to AS4C8M16S-6TANTR include: - AS4C8M16S-7TANTR: Similar specifications with a slightly higher speed of 7 nanoseconds. - AS4C8M16S-6TANTQ: Same specifications but available in a different package type (TQFP).

These alternative models offer similar functionality and can be used as substitutes depending on specific design requirements.

In conclusion, AS4C8M16S-6TANTR is a high-speed synchronous DRAM module that provides efficient data storage and retrieval capabilities. Its compact size, low power consumption, and fast access speed make it suitable for various electronic devices. However, it has limitations in terms of storage capacity and sensitivity to ESD. Careful consideration of alternative models can help meet specific design needs.