AS4C64M8D2-25BINTR

Product Overview

Category

AS4C64M8D2-25BINTR belongs to the category of semiconductor memory devices.

Use

It is primarily used as a storage component in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation: AS4C64M8D2-25BINTR operates at a speed of 25 ns, ensuring efficient data access.
• Large capacity: With a capacity of 64 megabits (8 megabytes), it provides ample storage space for data.
• Low power consumption: The device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: AS4C64M8D2-25BINTR is available in a small form factor package, allowing for easy integration into different systems.
• Reliable performance: It offers reliable and stable performance, ensuring data integrity.

Package and Quantity

AS4C64M8D2-25BINTR is packaged in a compact and durable integrated circuit (IC) package. It is typically sold in reels or trays containing multiple units.

Specifications

• Part Number: AS4C64M8D2-25BINTR
• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 64 Megabit x 8
• Operating Voltage: 3.3V
• Access Time: 25 ns
• Interface: Parallel
• Package Type: BGA (Ball Grid Array)
• Pin Count: 60 pins

Detailed Pin Configuration

The pin configuration of AS4C64M8D2-25BINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. VDD
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS
46. VSS
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS
55. VSS
56. VSS
57. VSS
58. VSS
59. VSS
60. VSS

Functional Features

• Burst Mode: AS4C64M8D2-25BINTR supports burst mode operation, allowing for faster data transfer.
• Auto Refresh: The device automatically performs refresh operations to maintain data integrity.
• Self-Timed Write Cycle: It features a self-timed write cycle, simplifying the memory write process.
• Power Down Mode: AS4C64M8D2-25BINTR can enter a low-power power-down mode when not in use, conserving energy.

Advantages and Disadvantages

Advantages

• High-speed operation enables quick data access.
• Large capacity provides ample storage space for various applications.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for easy integration into different systems.
• Reliable performance ensures data integrity.

Disadvantages

• Limited compatibility with certain older systems that do not support synchronous DRAM.

Working Principles

AS4C64M8D2-25BINTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, which are organized into rows and columns. The device uses clock signals to synchronize data transfer between the memory cells and the external system.

Detailed Application Field Plans

AS4C64M8D2-25BINTR finds application in various electronic devices and systems, including: 1. Personal computers and laptops 2. Servers and data centers 3. Mobile phones and tablets 4. Automotive electronics 5. Industrial control systems 6. Medical equipment 7. Consumer electronics

Alternative Models

Some