AS4C256M8D2-25BCN

Product Overview

Category

AS4C256M8D2-25BCN belongs to the category of dynamic random-access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices for data storage and retrieval purposes.

Characteristics

• AS4C256M8D2-25BCN is a high-density memory chip with a capacity of 256 megabits.
• It operates at a speed of 25 nanoseconds, making it suitable for applications requiring fast data access.
• The chip supports synchronous dynamic random-access memory (SDRAM) technology, ensuring efficient data transfer.

Package

AS4C256M8D2-25BCN comes in a compact and standardized BGA (Ball Grid Array) package. This package provides reliable electrical connections and efficient heat dissipation.

Essence

The essence of AS4C256M8D2-25BCN lies in its ability to store and retrieve large amounts of data quickly and reliably, enhancing the overall performance of electronic devices.

Packaging/Quantity

AS4C256M8D2-25BCN is typically packaged in reels or trays, containing a specific quantity of chips per package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 256 Megabits
• Speed: 25 Nanoseconds
• Organization: 256M x 8 bits
• Voltage Supply: 3.3 Volts
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA

Detailed Pin Configuration

AS4C256M8D2-25BCN has a total of 66 pins arranged in a specific configuration. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. /RAS
12. /CAS
13. /WE
14. /CS
15. BA0
16. BA1
17. A0
18. A1
19. A2
20. A3
21. A4
22. A5
23. A6
24. A7
25. A8
26. A9
27. A10
28. A11
29. A12
30. A13
31. A14
32. A15
33. A16
34. A17
35. A18
36. A19
37. A20
38. A21
39. A22
40. A23
41. A24
42. A25
43. A26
44. A27
45. A28
46. A29
47. A30
48. A31
49. VDD
50. VSS
51. CLK
52. CKE
53. /CS2
54. /CS3
55. /CS4
56. /CS5
57. /CS6
58. /CS7
59. /CS8
60. /CS9
61. /CS10
62. /CS11
63. /CS12
64. /CS13
65. /CS14
66. /CS15

Functional Features

• AS4C256M8D2-25BCN supports burst mode operations, allowing for efficient consecutive data transfers.
• It incorporates a self-refresh mode, enabling power-saving capabilities when the memory is not actively accessed.
• The chip features a programmable burst length, providing flexibility in data transfer operations.
• AS4C256M8D2-25BCN supports multiple banks, allowing simultaneous access to different sections of memory.

Advantages and Disadvantages

Advantages

• High-density storage capacity
• Fast data access speed
• Efficient burst mode operations
• Power-saving self-refresh mode
• Support for multiple banks

Disadvantages

• Relatively higher power consumption compared to other memory technologies
• Limited compatibility with older systems that do not support SDRAM

Working Principles

AS4C256M8D2-25BCN operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. To read or write data, the chip utilizes clock signals to synchronize the timing of data transfers.

During read operations, the requested data is accessed by activating the appropriate row and column addresses. The data is then transferred to