Alliance Memory, Inc.
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AS4C16M32MD1-5BINTR
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AS4C16M32MD1-5BINTR

Product Overview

Category

AS4C16M32MD1-5BINTR belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • High-speed operation
  • Large storage capacity
  • Low power consumption
  • Compact package size

Package

AS4C16M32MD1-5BINTR is available in a small form factor package, which makes it suitable for space-constrained applications.

Essence

The essence of AS4C16M32MD1-5BINTR lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

AS4C16M32MD1-5BINTR is typically packaged in trays or reels, with each containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

  • Part Number: AS4C16M32MD1-5BINTR
  • Memory Type: Synchronous DRAM (SDRAM)
  • Organization: 16M words x 32 bits
  • Operating Voltage: 3.3V
  • Speed Grade: -5B
  • Refresh Mode: Self-refresh
  • Interface: Parallel
  • Package Type: BGA (Ball Grid Array)
  • Pin Count: 90

Detailed Pin Configuration

The pin configuration of AS4C16M32MD1-5BINTR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. A0
  35. A1
  36. A2
  37. A3
  38. A4
  39. A5
  40. A6
  41. A7
  42. A8
  43. A9
  44. A10
  45. A11
  46. A12
  47. A13
  48. A14
  49. A15
  50. A16
  51. A17
  52. A18
  53. A19
  54. A20
  55. A21
  56. A22
  57. A23
  58. A24
  59. A25
  60. A26
  61. A27
  62. A28
  63. A29
  64. A30
  65. A31
  66. /CAS
  67. /RAS
  68. /WE
  69. /CS0
  70. /CS1
  71. /CS2
  72. /CS3
  73. /CKE
  74. /CLK
  75. /DQM0
  76. /DQM1
  77. /DQS0
  78. /DQS1
  79. VSS
  80. VSS
  81. VSS
  82. VSS
  83. VSS
  84. VSS
  85. VSS
  86. VSS
  87. VSS
  88. VSS
  89. VSS
  90. VDDQ

Functional Features

  • High-speed data transfer
  • Random access capability
  • Burst mode operation
  • On-chip refresh circuitry
  • Low power standby mode

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval
  • Large storage capacity
  • Low power consumption
  • Compact package size

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited endurance (number of read/write cycles)

Working Principles

AS4C16M32MD1-5BINTR operates based on the principles of synchronous dynamic random-access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information can be accessed and retrieved by sending appropriate signals to the memory module.

Detailed Application Field Plans

AS4C16M32MD1-5BINTR finds applications in

技術ソリューションにおける AS4C16M32MD1-5BINTR の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of AS4C16M32MD1-5BINTR in technical solutions:

1. What is AS4C16M32MD1-5BINTR? AS4C16M32MD1-5BINTR is a specific type of memory module commonly used in technical solutions. It has a capacity of 16 megabits (Mb) and operates at a speed of 5 nanoseconds (ns).

2. What are the main applications of AS4C16M32MD1-5BINTR? AS4C16M32MD1-5BINTR is often used in various technical solutions, including embedded systems, networking equipment, telecommunications devices, and industrial automation.

3. What is the voltage requirement for AS4C16M32MD1-5BINTR? AS4C16M32MD1-5BINTR operates at a voltage of 3.3 volts (V). It is important to ensure that the power supply meets this requirement for proper functioning.

4. Can AS4C16M32MD1-5BINTR be used in both read and write operations? Yes, AS4C16M32MD1-5BINTR supports both read and write operations. It allows data to be stored and retrieved from the memory module as needed.

5. What is the maximum operating temperature range for AS4C16M32MD1-5BINTR? AS4C16M32MD1-5BINTR can operate within a temperature range of -40°C to +85°C. It is designed to withstand a wide range of environmental conditions.

6. Does AS4C16M32MD1-5BINTR support error correction? No, AS4C16M32MD1-5BINTR does not support error correction. It is a non-ECC (Error-Correcting Code) memory module.

7. Can AS4C16M32MD1-5BINTR be used in both single and dual-rank configurations? Yes, AS4C16M32MD1-5BINTR can be used in both single and dual-rank configurations, depending on the specific requirements of the technical solution.

8. What is the power consumption of AS4C16M32MD1-5BINTR? AS4C16M32MD1-5BINTR has a typical power consumption of 250 milliwatts (mW) during active operation and 10 milliwatts (mW) during standby mode.

9. Is AS4C16M32MD1-5BINTR compatible with different memory controllers? Yes, AS4C16M32MD1-5BINTR is designed to be compatible with various memory controllers, making it versatile for integration into different technical solutions.

10. Can AS4C16M32MD1-5BINTR be easily soldered onto a PCB? Yes, AS4C16M32MD1-5BINTR comes in a standard surface-mount package, making it suitable for easy soldering onto a printed circuit board (PCB) during the manufacturing process.

Please note that these answers are general and may vary depending on the specific implementation and requirements of the technical solution.