AS4C128M8D3-12BINTR

Product Overview

Category

AS4C128M8D3-12BINTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used as a main memory component in various electronic devices such as computers, servers, and embedded systems.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compatible with industry-standard interfaces

Package

AS4C128M8D3-12BINTR is available in a compact and standardized package, designed for easy integration into circuit boards.

Essence

The essence of AS4C128M8D3-12BINTR lies in its ability to provide reliable and efficient data storage and retrieval functions, crucial for the smooth operation of electronic devices.

Packaging/Quantity

AS4C128M8D3-12BINTR is typically packaged in trays or reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for production purposes.

Specifications

• Part Number: AS4C128M8D3-12BINTR
• Memory Type: Dynamic Random-Access Memory (DRAM)
• Organization: 128 Megabit x 8
• Operating Voltage: 2.5V - 3.3V
• Speed Grade: 12
• Package Type: BGA (Ball Grid Array)
• Temperature Range: Industrial (-40°C to +85°C)
• RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of AS4C128M8D3-12BINTR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. CS#
15. CKE
16. BA0
17. BA1
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. NC
35. NC
36. VDD
37. VDD
38. VSS
39. VSS
40. VSS

Note: "DQ" represents the data input/output pins, "VDD" refers to the power supply pins, "VSS" denotes the ground pins, and "A" represents the address pins.

Functional Features

• High-speed data transfer rate for efficient memory operations.
• Low power consumption for improved energy efficiency.
• Auto-refresh capability to maintain data integrity.
• On-die termination (ODT) for enhanced signal integrity.
• Burst mode operation for optimized data access.
• Support for various industry-standard interfaces.

Advantages and Disadvantages

Advantages

• High-speed performance enables faster data processing.
• Large storage capacity accommodates extensive data requirements.
• Compatibility with standard interfaces ensures easy integration.
• Auto-refresh capability helps in maintaining data integrity.
• On-die termination enhances signal quality.

Disadvantages

• Volatile memory requires constant power supply.
• Relatively higher power consumption compared to non-volatile memory.
• Susceptible to data loss in case of power failure or system shutdown.

Working Principles

AS4C128M8D3-12BINTR operates based on the principles of dynamic random-access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. To read or write data, the memory controller sends appropriate signals to the address and control pins, enabling the transfer of data between the memory module and the processor.

Detailed Application Field Plans

AS4C128M8D3-12BINTR finds extensive application in various electronic devices and systems, including: - Personal computers - Servers - Workstations - Networking equipment - Embedded systems - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to AS4C128M8D3-12BINTR are: - AS4C256M16D3-12BINTR - AS4C512M32D3-12BINTR - AS4C1G32MD3-12BINTR - AS4C2G64MD3-12BINTR

These alternative models offer higher storage