AT45DB641E-SHN2B-T

Product Overview

Category

AT45DB641E-SHN2B-T belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile memory
• High-speed data transfer
• Low power consumption
• Large storage capacity
• Reliable and durable

Package

AT45DB641E-SHN2B-T is available in a small form factor package, suitable for integration into compact electronic devices.

Essence

The essence of AT45DB641E-SHN2B-T lies in its ability to provide reliable and high-capacity data storage in a compact package.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Size: 64 megabits (8 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground
3. SI: Serial input
4. SO: Serial output
5. WP: Write protect
6. HOLD: Hold input
7. SCK: Serial clock
8. CS: Chip select
9. RST: Reset

Functional Features

• Page Program Operation: Allows data to be written to the memory in page-sized increments.
• Sector Erase Operation: Enables erasing of specific sectors within the memory.
• Continuous Read Mode: Facilitates sequential reading of data from the memory.
• Deep Power-Down Mode: Reduces power consumption when the device is not in use.
• Software Protection: Provides security by allowing write protection of specific memory areas.

Advantages and Disadvantages

Advantages

• High-speed data transfer enables efficient data storage and retrieval.
• Large storage capacity accommodates a wide range of applications.
• Low power consumption prolongs battery life in portable devices.
• Reliable and durable, ensuring data integrity over extended periods.
• Compact package size allows for easy integration into various electronic devices.

Disadvantages

• Limited erase/program cycles may restrict certain high-write applications.
• Higher cost compared to some other types of memory technologies.

Working Principles

AT45DB641E-SHN2B-T utilizes flash memory technology to store and retrieve data. It employs a Serial Peripheral Interface (SPI) for communication with the host device. The memory is organized into sectors and pages, allowing for efficient read and write operations. Data can be programmed in page-sized increments and erased at the sector level. The device also features software protection mechanisms to prevent unauthorized writes.

Detailed Application Field Plans

AT45DB641E-SHN2B-T finds application in various electronic devices that require reliable and high-capacity data storage. Some potential fields of use include: 1. Consumer electronics (e.g., smartphones, tablets, digital cameras) 2. Automotive systems (e.g., infotainment systems, navigation units) 3. Industrial control systems (e.g., PLCs, data loggers) 4. Medical devices (e.g., patient monitoring systems, diagnostic equipment) 5. Internet of Things (IoT) devices (e.g., smart home appliances, wearable devices)

Detailed and Complete Alternative Models

1. AT45DB321E-SHN2B-T: 32 megabit (4 megabyte) flash memory with similar features and specifications.
2. AT45DB1282E-SHN2B-T: 128 megabit (16 megabyte) flash memory with higher storage capacity.
3. AT45DB641D-SHN2B-T: Another variant of the AT45DB641E series with slightly different characteristics.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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