AT45DB641E-SHN-B
Product Overview
Category
AT45DB641E-SHN-B belongs to the category of flash memory devices.
Use
It is primarily used for data storage and retrieval in various electronic devices.
Characteristics
- Non-volatile memory
- High-density storage capacity
- Fast read and write operations
- Low power consumption
- Reliable and durable
Package
AT45DB641E-SHN-B is available in a small outline package (SOP) format.
Essence
The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.
Packaging/Quantity
AT45DB641E-SHN-B is typically packaged in reels, with each reel containing a specific quantity of devices.
Specifications
- Storage Capacity: 64 megabits (8 megabytes)
- Interface: Serial Peripheral Interface (SPI)
- Operating Voltage: 2.7V - 3.6V
- Operating Temperature Range: -40°C to +85°C
- Data Retention: Up to 20 years
- Endurance: 10,000 erase/write cycles
Detailed Pin Configuration
- VCC: Power supply voltage
- GND: Ground reference
- SI: Serial input
- SO: Serial output
- WP: Write protect
- HOLD: Hold input
- SCK: Serial clock
- CS: Chip select
Functional Features
- Page Program Operation: Allows individual bytes or full pages to be programmed
- Sector Erase Operation: Erases a specified sector of memory
- Block Erase Operation: Erases a specified block of memory
- Continuous Read Mode: Enables sequential reading of multiple pages
- Deep Power-down Mode: Reduces power consumption when the device is not in use
- Software Protection: Provides security by preventing unauthorized access to data
Advantages and Disadvantages
Advantages
- High storage capacity
- Fast read and write operations
- Low power consumption
- Reliable and durable
- Secure data protection
Disadvantages
- Limited endurance (10,000 erase/write cycles)
- Requires a compatible interface for communication
Working Principles
AT45DB641E-SHN-B utilizes flash memory technology to store digital information. It consists of multiple memory cells that can be electrically programmed and erased. The device communicates with the host system through the Serial Peripheral Interface (SPI). Data is written to and read from the memory cells using specific commands sent via the SPI interface.
Detailed Application Field Plans
AT45DB641E-SHN-B finds applications in various electronic devices, including but not limited to: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive systems (e.g., infotainment systems, navigation systems) - Industrial control systems - Medical devices - Communication equipment
Detailed and Complete Alternative Models
- AT45DB321E-SHN-B: 32 megabits (4 megabytes) storage capacity
- AT45DB128E-SHN-B: 128 megabits (16 megabytes) storage capacity
- AT45DB256E-SHN-B: 256 megabits (32 megabytes) storage capacity
- AT45DB512E-SHN-B: 512 megabits (64 megabytes) storage capacity
These alternative models offer different storage capacities to cater to varying requirements.
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技術ソリューションにおける AT45DB641E-SHN-B の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure! Here are 10 common questions and answers related to the application of AT45DB641E-SHN-B in technical solutions:
Q: What is the AT45DB641E-SHN-B? A: The AT45DB641E-SHN-B is a high-density flash memory chip manufactured by Adesto Technologies. It has a capacity of 64 megabits (8 megabytes) and is commonly used for data storage in various electronic devices.
Q: What are the key features of the AT45DB641E-SHN-B? A: The key features of this flash memory chip include a serial interface, page-based architecture, low power consumption, high-speed data transfer, and built-in security features.
Q: How can the AT45DB641E-SHN-B be used in technical solutions? A: The AT45DB641E-SHN-B can be used as a storage solution in a wide range of applications such as industrial control systems, automotive electronics, medical devices, consumer electronics, and more.
Q: What is the maximum data transfer rate of the AT45DB641E-SHN-B? A: The maximum data transfer rate of this flash memory chip is 85 megabits per second (Mbps), allowing for fast read and write operations.
Q: Does the AT45DB641E-SHN-B support wear-leveling algorithms? A: Yes, the AT45DB641E-SHN-B supports internal wear-leveling algorithms that help distribute data evenly across memory cells, extending the lifespan of the flash memory.
Q: Can the AT45DB641E-SHN-B operate in harsh environments? A: Yes, this flash memory chip is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration.
Q: Does the AT45DB641E-SHN-B have built-in security features? A: Yes, it includes hardware-based security features such as a unique ID, password protection, and data encryption to ensure the integrity and confidentiality of stored data.
Q: What is the typical power consumption of the AT45DB641E-SHN-B? A: The typical power consumption of this flash memory chip is very low, making it suitable for battery-powered devices. It has an active current of around 10 mA during read/write operations.
Q: Can the AT45DB641E-SHN-B be easily integrated into existing systems? A: Yes, it uses a standard serial interface (SPI) which is widely supported by microcontrollers and other embedded systems, making it easy to integrate into existing designs.
Q: Are there any development tools or resources available for working with the AT45DB641E-SHN-B? A: Yes, Adesto Technologies provides documentation, datasheets, application notes, and software libraries to assist developers in implementing the AT45DB641E-SHN-B in their technical solutions.