AT45DB081D-MU-2.5-SL383

Product Overview

Category

The AT45DB081D-MU-2.5-SL383 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The AT45DB081D-MU-2.5-SL383 retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 8 megabits (1 megabyte).
• Fast access time: The device provides quick access to stored data with a read access time of 85 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Reliable: The flash memory technology ensures durability and long-term data retention.
• Compact package: The AT45DB081D-MU-2.5-SL383 is available in a small form factor package, enabling its integration into space-constrained designs.

Package and Quantity

This product is packaged in a surface-mount 8-pin SOIC (Small Outline Integrated Circuit) package. It is typically sold in reels containing multiple units.

Specifications

• Storage Capacity: 8 megabits (1 megabyte)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Write Cycles: 10,000 minimum

Pin Configuration

The AT45DB081D-MU-2.5-SL383 has the following pin configuration:

1. Chip Select (/CS)
2. Output Enable (/OE)
3. Write Protect (/WP)
4. Serial Data Input (SI)
5. Serial Data Output (SO)
6. Serial Clock (SCK)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• Page Program Operation: Allows data to be written to the memory in page-sized increments.
• Sector Erase Operation: Enables erasing of large blocks of memory for efficient data management.
• Continuous Read Mode: Facilitates sequential reading of data from multiple memory locations.
• Software Protection: Provides write protection for specific memory sectors using software commands.
• Deep Power-down Mode: Reduces power consumption when the device is not in use.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast access time allows for quick retrieval of data.
• Low power consumption extends battery life in portable devices.
• Reliable and durable flash memory technology ensures data integrity.
• Compact package enables integration into space-constrained designs.

Disadvantages

• Limited erase/write cycles may affect the lifespan of the device.
• Higher cost compared to other non-volatile memory options.

Working Principles

The AT45DB081D-MU-2.5-SL383 utilizes the principles of flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information, which can be read, written, and erased electronically.

During a write operation, the device applies a high voltage to the control gate of the selected memory cell, allowing electrons to tunnel through the insulating layer and become trapped in the floating gate. Reading data involves sensing the presence or absence of charge in the floating gate, while erasing data removes the trapped charges from the memory cells.

Detailed Application Field Plans

The AT45DB081D-MU-2.5-SL383 finds application in various fields, including:

1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage.
2. Automotive Systems: Employed in infotainment systems, navigation devices, and instrument clusters for storing critical information.
3. Industrial Automation: Utilized in control systems, data loggers, and sensors for reliable data storage.
4. Medical Devices: Integrated into medical equipment such as patient monitors and diagnostic devices to store patient data securely.

Detailed Alternative Models

1. AT45DB161D-MU-2.5-SL383: Offers double the storage capacity (16 megabits) compared to the AT45DB081D-MU-2.5-SL383.
2. AT45DB321D-MU-2.5-SL383: Provides even higher storage capacity (32 megabits) for applications requiring more memory.
3. AT45DB641D-MU-2.5-SL383: Offers a larger storage capacity of 64 megabits, suitable for demanding data storage needs.

These alternative models provide increased storage capacities while maintaining similar characteristics and functionality to the AT45DB081D-MU-