AT45DB021E-MHN2B-T

Product Overview

Category

AT45DB021E-MHN2B-T belongs to the category of flash memory devices.

Use

It is primarily used for data storage and retrieval in various electronic devices.

Characteristics

• Non-volatile memory
• High-speed data transfer
• Low power consumption
• Small form factor
• Reliable and durable

Package

The AT45DB021E-MHN2B-T comes in a compact package, suitable for surface mount technology (SMT) applications.

Essence

The essence of AT45DB021E-MHN2B-T lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Size: 2 megabits (256 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 10,000 cycles

Detailed Pin Configuration

The AT45DB021E-MHN2B-T has a total of 8 pins, each serving a specific purpose:

1. VCC: Power supply voltage input
2. GND: Ground reference
3. SI: Serial data input
4. SO: Serial data output
5. WP: Write protect input
6. HOLD: Hold input
7. SCK: Serial clock input
8. CS: Chip select input

Functional Features

• Page Program Operation: Allows individual bytes or entire pages to be programmed
• Continuous Read Mode: Enables sequential reading of multiple pages
• Sector Erase Operation: Erases a specific sector of memory
• Deep Power-down Mode: Reduces power consumption when the device is not in use
• Software Protection: Provides write protection for specific memory areas

Advantages and Disadvantages

Advantages

• High-speed data transfer allows for efficient data storage and retrieval.
• Low power consumption extends battery life in portable devices.
• Small form factor enables integration into compact electronic devices.
• Reliable and durable, ensuring data integrity over extended periods.

Disadvantages

• Limited storage capacity compared to higher-capacity flash memory devices.
• Higher cost per megabit compared to larger capacity options.
• Limited erase/program cycles may restrict certain applications.

Working Principles

The AT45DB021E-MHN2B-T utilizes the Serial Peripheral Interface (SPI) to communicate with the host device. It stores data in non-volatile memory cells, which retain information even when power is removed. The device can be programmed at the byte or page level and supports sequential reading of multiple pages. Erasing of specific sectors is also possible, allowing for efficient management of stored data.

Detailed Application Field Plans

The AT45DB021E-MHN2B-T finds application in various electronic devices, including but not limited to: - Consumer electronics - Automotive systems - Industrial control systems - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. AT45DB011D-SSHN-T: 1 megabit flash memory with similar features and package.
2. AT45DB041D-SSHN-T: 4 megabit flash memory with similar features and package.
3. AT45DB081D-SSHN-T: 8 megabit flash memory with similar features and package.
4. AT45DB161D-SSHN-T: 16 megabit flash memory with similar features and package.
5. AT45DB321D-SSHN-T: 32 megabit flash memory with similar features and package.

These alternative models offer different storage capacities to suit various application requirements.

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