AT45DB021E-MHN-Y

Product Overview

Category

AT45DB021E-MHN-Y belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The data stored in AT45DB021E-MHN-Y is retained even when power is removed.
• High storage capacity: It has a storage capacity of 2 megabits (256 kilobytes).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Low power consumption: AT45DB021E-MHN-Y is designed to consume minimal power during operation.
• Durable and reliable: It offers robust performance and can withstand harsh environmental conditions.
• Easy integration: The device is compatible with standard interfaces, making it easy to integrate into various systems.

Package and Quantity

AT45DB021E-MHN-Y is available in a small form factor package, typically a surface mount package. The exact package type may vary depending on the manufacturer. It is usually supplied in reels or trays, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Memory Size: 2 Megabits (256 Kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: 100,000 write cycles

Pin Configuration

The AT45DB021E-MHN-Y has a total of 8 pins, which are assigned specific functions:

1. Chip Select (/CS): Used to enable or disable the device for communication.
2. Serial Clock (SCK): Provides the clock signal for data transfer.
3. Serial Data Input (SI): Used to input data into the device.
4. Serial Data Output (SO): Outputs data from the device.
5. Write Protect (/WP): Controls write protection of the memory.
6. Reset (/RESET): Resets the device to its default state.
7. VCC: Power supply voltage.
8. GND: Ground reference.

Functional Features

• Page Program: Allows data to be written in page mode, enhancing write performance.
• Continuous Read Mode: Enables sequential reading of multiple pages without the need for repeated commands.
• Sector Erase: Erases a specific sector of memory, allowing for efficient data management.
• Software Protection: Provides software-based protection mechanisms to prevent unauthorized access to data.
• Deep Power-down Mode: Reduces power consumption when the device is not in use.

Advantages and Disadvantages

Advantages

• High storage capacity for its compact size.
• Fast data transfer rate, enabling quick read and write operations.
• Low power consumption, making it suitable for battery-powered devices.
• Durable and reliable performance, ensuring data integrity.
• Easy integration with standard interfaces.

Disadvantages

• Limited storage capacity compared to higher-end flash memory devices.
• Relatively higher cost per unit compared to lower-capacity alternatives.

Working Principles

AT45DB021E-MHN-Y utilizes the principles of flash memory technology. It consists of multiple memory cells that store data using electrically isolated floating gate transistors. These transistors can be programmed or erased by applying appropriate voltage levels. The device uses a serial peripheral interface (SPI) for communication with the host system, allowing for easy integration and data transfer.

Detailed Application Field Plans

AT45DB021E-MHN-Y finds applications in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Alternative Models

There are several alternative models available in the market that offer similar functionality to AT45DB021E-MHN-Y. Some notable alternatives include: - AT25SF041: A 4-megabit flash memory device with a smaller form factor. - MX25L2006E: A 2-megabit flash memory device with extended temperature range. - W25Q16JV: A 16-megabit flash memory device with higher storage capacity.

These alternative models can be considered based on specific requirements and compatibility with the target system.

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