GT28F320C3TA100SB93

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast read/write speeds
  • Reliable data retention
  • Low power consumption
• Package: TFBGA
• Essence: Non-volatile memory for storing digital information
• Packaging/Quantity: Individually packaged, quantity varies based on manufacturer

Specifications

• Memory Type: NAND Flash
• Capacity: 32 gigabytes (GB)
• Interface: Parallel
• Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The GT28F320C3TA100SB93 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. CE#
44. RE#
45. WP#
46. RY/BY#
47. GND
48. NC

Functional Features

• High-speed data transfer
• Error correction and detection mechanisms
• Block erase and program operations
• Wear-leveling algorithms for extended lifespan
• Power-saving features for efficient operation

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Reliable data retention - Low power consumption - Suitable for various electronic devices

Disadvantages: - Limited endurance (program/erase cycles) - Higher cost compared to other memory options

Working Principles

The GT28F320C3TA100SB93 utilizes NAND flash technology to store digital information. It consists of a grid of memory cells, where each cell can store multiple bits of data. The memory cells are organized into blocks, which can be individually erased or programmed. When data is written, the memory cells are electrically charged or discharged to represent the desired information. Reading the data involves detecting the electrical state of the memory cells.

Detailed Application Field Plans

The GT28F320C3TA100SB93 is commonly used in various electronic devices that require non-volatile storage, such as:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Industrial control systems
6. Automotive electronics

Detailed and Complete Alternative Models

1. GT28F320C3TA100SB94

   • Similar specifications and features as GT28F320C3TA100SB93
   • Different package type (TSOP instead of TFBGA)

2. GT28F320C3TA100SB95

   • Similar specifications and features as GT28F320C3TA100SB93
   • Higher capacity (64GB)

3. GT28F320C3TA100SB96

   • Similar specifications and features as GT28F320C3TA100SB93
   • Lower power consumption

4. GT28F320C3TA100SB97

   • Similar specifications and features as GT28F320C3TA100SB93
   • Extended operating temperature range (-40°C to +105°C)

These alternative models provide options with slight variations in package type, capacity, power consumption, and operating temperature range.

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